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Royal Society of Chemistry, CrystEngComm, 23(20), p. 3202-3206

DOI: 10.1039/c8ce00431e

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Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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