Published in
American Institute of Physics, Journal of Applied Physics, 24(122), p. 245701
DOI: 10.1063/1.5004038
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ReS2-based interlayer tunnel field effect transistor
Journal article published in 2017 by
Omar B. Mohammed,
Hema C. P. Movva 
,
Nitin Prasad,
Amithraj Valsaraj,
Sangwoo Kang ,
Chris M. Corbet,
Takashi Taniguchi,
Kenji Watanabe ,
Leonard F. Register,
Emanuel Tutuc ,
Sanjay K. Banerjee
,
Nitin Prasad,
Amithraj Valsaraj,
Sangwoo Kang ,
Chris M. Corbet,
Takashi Taniguchi,
Kenji Watanabe ,
Leonard F. Register,
Emanuel Tutuc ,
Sanjay K. Banerjee
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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